Radiative recombination in PbTe quantum wells

• Published in: Applied physics letters Vol. 54; no. 7; pp. 653 - 655
• Main Authors: HEYEN, E. T, HAGEROTT, M, NURMIKKO, A. V, PARTIN, D. L
• Format: Journal Article
• Language: English
• Published: Melville, NY American Institute of Physics 13-02-1989
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in interface structures; Exact sciences and technology; Physics; Temperature; Photoluminescence; Lead Tellurides; Radiative recombination; Theoretical study; Multiple quantum well; Electron hole pair; Two dimensional model; Experimental study; Europium Lead Tellurides Mixed; Inorganic compound; Time resolution; Charge carrier recombination; Charge carrier generation; Lanthanide Compounds; Charge carrier concentration; Low temperature
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.100908

Recombination of quasi-two-dimensional (2D) free-electron-hole pairs in PbTe/(Pb,Eu)Te multiple quantum wells has been studied in time-resolved photoluminescence experiments in the 4–5 μm region on subnanosecond scale by an infrared upconversion method. Over a finite temperature range, the recombination rate is seen to vary approximately as 1/T, as expected for a radiative process in a nondegenerate 2D carrier gas. A model is presented where the recombination is enhanced by the presence of a substantial background hole density in the PbTe wells, generated in a manner analogous to modulation doping.