Photoluminescence, intersubband absorption, and double crystal x-ray diffraction in p -doped InGaAs/AlGaAs strained multiple quantum wells

Photoluminescence, intersubband absorption, and double crystal x-ray diffraction in p -doped InGaAs/AlGaAs strained multiple quantum wells

We report the correlation of photoluminescence (PL), infrared intersubband absorption, and double crystal x-ray diffraction (DCXRD) data for a p-doped InGaAs/AlGaAs strained multi- ple-quantum-well structure grown by molecular beam epitaxy. A PL doublet at 1.476 and 1.563 eV involves two confined ho...

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Bibliographic Details
Published in:Applied physics letters Vol. 65; no. 11; pp. 1430 - 1432
Main Authors: Chin, V. W. L., Tansley, T. L., Zhang, D. H., Radhakrishnan, K., Yoon, S. F., Clark, A.
Format: Journal Article
Language:English
Published: 12-09-1994
Online Access:Get full text
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Summary:We report the correlation of photoluminescence (PL), infrared intersubband absorption, and double crystal x-ray diffraction (DCXRD) data for a p-doped InGaAs/AlGaAs strained multi- ple-quantum-well structure grown by molecular beam epitaxy. A PL doublet at 1.476 and 1.563 eV involves two confined holes states and their 87 meV separation is in good agreement with the measured intersubband absorption of about 14.5 μm (85 meV). Furthermore, when the well width obtained from DCXRD measurement is included excellent agreement with an envelope function calculation is found for the energy levels determined by PL and intersubband absorption energy.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
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content type line 23
ISSN:0003-6951
1077-3118
DOI:10.1063/1.112006