Stimulated emission from p-Ge due to transitions between light-hole landau levels and excited states of shallow impurities

• Published in: Applied physics letters Vol. 60; no. 15; pp. 1785 - 1787
• Main Authors: KREMSER, C, HEISS, W, UNTERRAINER, K, GORNIK, E, HALLER, E. E, HANSEN, W. L
• Format: Journal Article
• Language: English
• Published: Melville, NY American Institute of Physics 13-04-1992
• Subjects: Exact sciences and technology; Fundamental areas of phenomenology (including applications); Lasers; Optics; Physics; Semiconductor lasers; laser diodes; Far infrared radiation; Germanium; Stimulated emission; P type conductivity; Landau level; Semiconductor laser
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.107164

We investigate the far infrared emission spectra obtained from the so-called p-Ge light-heavy-hole laser. The occurrence of a frequency gap between the observed low-frequency and high-frequency range is for the first time explained by self-absorption due to impurity transitions. In the high-frequency range we find evidence of transitions between light-hole Landau levels and excited states of shallow impurities to be responsible for the lasing transitions.