GaInP window layers for GaAsP on SiGe/Si single and dual-junction solar cells

GaAsP solar cells have been grown on Si substrates facilitated by a SiGe graded buffer layer. Here, single-junction p+/n GaAsP and tandem n+/p GaAsP/SiGe solar cells are reported with an interest in improving efficiency by evaluation of the III-V device passivation layers and pathways to their optim...

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Bibliographic Details

Published in:	2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) pp. 2462 - 2465
Main Authors:	Schmieder, Kenneth J., Gerger, Andrew, Pulwin, Ziggy, Li Wang, Diaz, Martin, Curtin, Michael, Ebert, Chris, Lochtefeld, Anthony, Opila, Robert L., Barnett, Allen
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-06-2013
Subjects:	III-V semiconductor materials MOCVD Performance evaluation Photovoltaic cells Photovoltaic systems semiconductor growth Silicon Silicon germanium Substrates
Online Access:	Get full text
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