GaInP window layers for GaAsP on SiGe/Si single and dual-junction solar cells

GaAsP solar cells have been grown on Si substrates facilitated by a SiGe graded buffer layer. Here, single-junction p+/n GaAsP and tandem n+/p GaAsP/SiGe solar cells are reported with an interest in improving efficiency by evaluation of the III-V device passivation layers and pathways to their optim...

Full description

Saved in:

Bibliographic Details
Published in:	2013 IEEE 39th Photovoltaic Specialists Conference (PVSC) pp. 2462 - 2465
Main Authors:	Schmieder, Kenneth J., Gerger, Andrew, Pulwin, Ziggy, Li Wang, Diaz, Martin, Curtin, Michael, Ebert, Chris, Lochtefeld, Anthony, Opila, Robert L., Barnett, Allen
Format:	Conference Proceeding
Language:	English
Published:	IEEE 01-06-2013
Subjects:	III-V semiconductor materials MOCVD Performance evaluation Photovoltaic cells Photovoltaic systems semiconductor growth Silicon Silicon germanium Substrates
Online Access:	Get full text
Tags:	Add Tag No Tags, Be the first to tag this record!

Description
Summary:	GaAsP solar cells have been grown on Si substrates facilitated by a SiGe graded buffer layer. Here, single-junction p+/n GaAsP and tandem n+/p GaAsP/SiGe solar cells are reported with an interest in improving efficiency by evaluation of the III-V device passivation layers and pathways to their optimization. Solar cells with varying window thicknesses are reported for both structures and assist in directing focus of future research. The GaAsP/SiGe on Si tandem solar cell demonstrates a result towards AM1.5G 20.8% AR-corrected efficiency.
ISSN:	0160-8371
DOI:	10.1109/PVSC.2013.6744974