Observation of a spin bottleneck for tunneling into the ν=1 quantum Hall state

• Published in: Physica. E, Low-dimensional systems & nanostructures Vol. 6; no. 1; pp. 722 - 726
• Main Authors: Chan, H.B, Ashoori, R.C, Pfeiffer, L.N, West, K.W
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-02-2000
• Subjects: Quantum Hall effect; Skyrmions; Tunneling; Tunneling; 73.40.G; 12.39.D; Quantum Hall effect; 73.40.H; Skyrmions
• ISSN: 1386-9477; 1873-1759
• DOI: 10.1016/S1386-9477(99)00182-4

We measure equilibrium tunneling of electrons from a 3D electrode into a high-mobility 2D electron system. For most 2D Landau level-filling factors, we find that tunneling can be characterized by a single, well-defined tunneling rate. However, for spin-polarized quantum Hall states (
ν=1,3 and
1
3
) tunneling occurs at two distinct rates that differ by up to two orders of magnitude. The dependence of the two rates on temperature and tunnel barrier thickness suggests that slow in-plane spin relaxation creates a bottleneck for tunneling of electrons.