Solar and infrared light sensing comparison of Yb/CIGS photodiode

• Published in: Sensors and actuators. A. Physical. Vol. 347; p. 113973
• Main Authors: Yavru, Celal Alp, Kaleli, Murat, Üncü, İsmail Serkan, Koç, Murat, Aldemir, Durmuş Ali
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 01-11-2022; Elsevier BV
• Subjects: Chemical vapor deposition; CIGS; Current voltage characteristics; Decay; Detectivity; Diodes; Electrical properties; Infrared radiation; Luminous intensity; Mathematical analysis; Photodiodes; Photovoltaic cells; Physical vapor deposition; Rare earth metals; Responsivity; Schottky photodiodes; Solar energy; Structural analysis; Surge protectors; Rare earth metals; Schottky photodiodes; Detectivity; Electrical properties; CIGS; Responsivity
• ISSN: 0924-4247; 1873-3069
• DOI: 10.1016/j.sna.2022.113973

Glass/Mo/CIGS/Yb Schottky photodiodes were fabricated by the physical vapor deposition method. The structural and morphological characterization of the CIGS layer on Mo was carried out. The current-voltage (I-V) characteristics were investigated in the dark, under solar light, and infrared. The diodes' ideality factor and zero bias barrier height were calculated as 1.55 and 0.84 eV in the dark, respectively. When the time-dependent current plots are examined, it is seen that the rise and decay times are lower for solar light than infrared. As the intensity of solar light increases, the rise and decay times decrease. The responsivity value for 100 mW/cm2 solar light was found to be 8.5 mA/W and the detectivity value was 1.7 × 107 Jones. For infrared light, the same parameters were calculated as 3.4 mA/W and 7.1 × 106 Jones. Furthermore, capacitance-voltage and conductance-voltage characteristics were evaluated for different frequencies.
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•Yb/CIGS photosensor was produced on bi-layer Mo layer.•Switch ON−OFF time was maintained at 5 s•I-t and C-t measurements taken at different solar light intesities (from 20 to 100 mW/cm2) and infrared (100 mW/cm2).•Responsivity and detectivity parameters were calculated.•Frequency−dependent C-V and G-V characteristics investigated.