Electrical characterization of crystalline Gd2O3 gate dielectric MOSFETs fabricated by damascene metal gate technology

Electrical characterization of crystalline Gd2O3 gate dielectric MOSFETs fabricated by damascene metal gate technology

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Bibliographic Details
Published in:Microelectronics and reliability Vol. 47; no. 4-5; pp. 528 - 531
Main Authors: Endres, Ralf, Stefanov, Yordan, Schwalke, Udo
Format: Journal Article
Language:English
Published: 01-04-2007
Online Access:Get full text
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Description
ISSN:0026-2714
DOI:10.1016/j.microrel.2007.01.018