InGaAs/InGaAsP integrated tunable detector grown by chemical beam epitaxy

• Published in: Applied physics letters Vol. 63; no. 13; pp. 1836 - 1838
• Main Authors: CHOA, F. S, TSANG, W. T, LOGAN, R. A, GNALL, R. P, KOCH, T. L, BURRUS, C. A, WU, M. C, CHEN, Y. K, KAPRE, R
• Format: Journal Article
• Language: English
• Published: Melville, NY American Institute of Physics 27-09-1993
• Subjects: Applied sciences; Detection, estimation, filtering, equalization, prediction; Exact sciences and technology; Information, signal and communications theory; Signal and communications theory; Signal, noise; Telecommunications and information theory; Ternary compound; Tunable circuit; Packet switching; Optical telecommunication; Wavelength division multiplexing; Bragg reflection; Indium Arsenides phosphides; Gallium Arsenides phosphides; Digital transmission; Gallium Arsenides; Reflectivity; Noise spectrum; Quaternary compound; Integrated circuit; Optical receiver; Indium Arsenides; Demultiplexer; Signal detection
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.110678

By controlling the thickness of the grating depth with chemical beam epitaxy (CBE) growth time, we report in this letter the design and performance of an integrated tunable detector. A carefully designed tunable active filter, which allows only one below threshold Fabry–Perot mode for operation, is integrated with a waveguide detector. The full tuning range of this kind of tunable device can now be utilized for system applications.