Midwave (4 μm) infrared lasers and light-emitting diodes with biaxially compressed InAsSb active regions

Midwave (4 μm) infrared lasers and light-emitting diodes with biaxially compressed InAsSb active regions

Heterostructures with biaxially compressed, As-rich InAsSb are being investigated as active regions for midwave infrared emitters. InAs1−xSbx/In1−xGaxAs (x≊0.1) strained-layer sublattices (SLSs), nominally lattice matched to InAs, were grown using metalorganic chemical vapor deposition. An SLS light...

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Bibliographic Details
Published in:Applied physics letters Vol. 64; no. 7; pp. 812 - 814
Main Authors: Kurtz, S. R., Biefeld, R. M., Dawson, L. R., Baucom, K. C., Howard, A. J.
Format: Journal Article
Language:English
Published: United States 14-02-1994
Subjects:
426002 - Engineering- Lasers & Masers- (1990-)
ANTIMONIDES
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COMPRESSION
DEPOSITION
DESIGN
ENGINEERING
INDIUM ANTIMONIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INFRARED SPECTRA
LASER MATERIALS
LASERS
LIGHT EMITTING DIODES
MATERIALS
OPTICAL PUMPING
PNICTIDES
PUMPING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SPECTRA
STRAINS
SUPERLATTICES
SURFACE COATING
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Description
Summary:Heterostructures with biaxially compressed, As-rich InAsSb are being investigated as active regions for midwave infrared emitters. InAs1−xSbx/In1−xGaxAs (x≊0.1) strained-layer sublattices (SLSs), nominally lattice matched to InAs, were grown using metalorganic chemical vapor deposition. An SLS light-emitting diode was demonstrated which emitted at 3.6 μm with 0.06% efficiency at 77 K. Optically pumped laser emission at 3.9 μm was observed in a SLS/InPSb heterostructure. The laser had a maximum operating temperature of approximately 100 K.
Bibliography:AC04-94AL85000
ISSN:0003-6951
1077-3118
DOI:10.1063/1.111022