Ion beam etching of CVD diamond film in Ar, Ar/O2 and Ar/CF4 gas mixtures

• Published in: Diamond and related materials Vol. 11; no. 3-6; pp. 833 - 836
• Main Authors: Leech, P.W., Reeves, G.K., Holland, A.S., Shanks, F.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01-03-2002; Elsevier
• Subjects: Cross-disciplinary physics: materials science; rheology; Diamond films; Exact sciences and technology; Fullerenes and related materials; diamonds, graphite; Ion beam etching; Materials science; Physics; Specific materials; Surface cleaning, etching, patterning; Surface treatments; Ion beam etching; Diamond films; Oxygen; Argon ions; Films; Carbon tetrafluoride; Diamonds; Surface treatments; Experimental study; Binary mixtures; Gas mixtures; CVD; Energy; Nonmetals; Chemical composition; Argon
• ISSN: 0925-9635; 1879-0062
• DOI: 10.1016/S0925-9635(01)00605-7

The Ar+ ion beam etching of diamond in the presence of O2 or CF4 gases was examined as a function of ion energy and gas composition. The details of etch rate and the structural features of the etched surfaces have been interpreted in terms of the mechanism of etching. In all cases, the etch rate has shown a square root dependence on ion energy, Ei1/2. The etching of the diamond film in Ar/O2 gases was characterised by a moderate etch rate (12–20 nm/min) dependent on the percentage of O2 and has been attributed to ion-enhanced chemical etching. In comparison, the etching with Ar+ ions or Ar+ in the presence of CF4 has shown a low etch rate (8–10 nm/min) which was insensitive to variation in CF4 percentage indicative of sputter etching.