Carbon and germanium distributions in Si1−x−yGexCy layers epitaxially grown on Si(001) by RTCVD

Carbon and germanium distributions in Si1−x−yGexCy layers epitaxially grown on Si(001) by RTCVD

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Bibliographic Details
Published in:Thin solid films Vol. 294; no. 1-2; pp. 129 - 132
Main Authors: Guedj, C., Portier, X., Hairie, A., Bouchier, D., Calvarin, G., Piriou, B.
Format: Journal Article
Language:English
Published: 15-02-1997
Online Access:Get full text
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ISSN:0040-6090
DOI:10.1016/S0040-6090(96)09243-7