Dipole modification of the surface electronic structure of III–V semiconductors

• Published in: Solid state communications Vol. 384; p. 115484
• Main Authors: Lebedev, Mikhail V., Savchenko, Grigory M., Averkiev, Nikita S.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01-06-2024
• ISSN: 0038-1098; 1879-2766
• DOI: 10.1016/j.ssc.2024.115484

A simple electrostatic model is proposed to account for the effect of dipoles associated with surface chemical bonds on the electronic structure of the semiconductor surface. In accordance with the model, the formation of the dipolar surface chemical bonds can change the width of the surface depletion layer leaving the surface band bending nearly intact. In addition, the surface dipoles can redistribute charge localized at surface states, which can modify surface recombination velocity of the semiconductor. The model can explain recently obtained experimental data on the electronic passivation of n-InP(100) surface with different sulfide solutions.
•Effect of surface dipoles on the semiconductor surface electronic structure is described.•Surface dipoles reduce the surface depletion layer without changing the band bending.•Surface dipoles reduce surface states density causing thus surface recombination velocity decrease.•Proposed model explains available experimental data on passivated InP(100) surfaces.