Quantum capacitance transient phenomena in high-k dielectric armchair graphene nanoribbon field-effect transistor model

•Quantum capacitance becomes dominant with high-k ultra-thin dielectrics.•Quantum capacitance in Nanoribbons is influenced by Van-Hove singularities.•The transient mode in an armchair graphene nanoribbon field-effect transistor results in undulations.•An extended Verilog-A model was built to include...

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Bibliographic Details

Published in:	Solid-state electronics Vol. 184; p. 108060
Main Authors:	Avnon, Asaf, Golman, Roman, Garzón, Esteban, Ngo, Ha-Duong, Lanuzza, Marco, Teman, Adam
Format:	Journal Article
Language:	English
Published:	Elsevier Ltd 01-10-2021
Subjects:	2D materials Armchair graphene nanoribbon field effect transistor (AGNRFET) Graphene High-k dielectric Low Power Quantum capacitance Tunnel FETs Graphene High-k dielectric Low Power 2D materials Quantum capacitance Armchair graphene nanoribbon field effect transistor (AGNRFET) Tunnel FETs
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