Quantum capacitance transient phenomena in high-k dielectric armchair graphene nanoribbon field-effect transistor model

• Published in: Solid-state electronics Vol. 184; p. 108060
• Main Authors: Avnon, Asaf, Golman, Roman, Garzón, Esteban, Ngo, Ha-Duong, Lanuzza, Marco, Teman, Adam
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01-10-2021
• Subjects: 2D materials; Armchair graphene nanoribbon field effect transistor (AGNRFET); Graphene; High-k dielectric; Low Power; Quantum capacitance; Tunnel FETs; Graphene; High-k dielectric; Low Power; 2D materials; Quantum capacitance; Armchair graphene nanoribbon field effect transistor (AGNRFET); Tunnel FETs
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2021.108060

•Quantum capacitance becomes dominant with high-k ultra-thin dielectrics.•Quantum capacitance in Nanoribbons is influenced by Van-Hove singularities.•The transient mode in an armchair graphene nanoribbon field-effect transistor results in undulations.•An extended Verilog-A model was built to include the quantum capacitance influence.
Graphene Nanoribbons (GNRs) are an emerging candidate to challenge the place of current semiconductor-based technology. In this work, we extend a model for Armchair Graphene Nanoribbons Field-Effect Transistor (AGNRFET) to the high-k dielectrics realm and examine the influences of quantum capacitance on its transient phenomena. The model is coded with Verilog-A and evaluated through SPICE simulations. We have considered a comparison between the extended model with and without the influence of the quantum capacitance. Simulation results show a realistic scenario where influence of the quantum capacitance significantly impacts the transient behaviour in circuit design. This proves the proposed model to be a valuable aid for the circuit design of future graphene-based applications.