Quantum capacitance transient phenomena in high-k dielectric armchair graphene nanoribbon field-effect transistor model
•Quantum capacitance becomes dominant with high-k ultra-thin dielectrics.•Quantum capacitance in Nanoribbons is influenced by Van-Hove singularities.•The transient mode in an armchair graphene nanoribbon field-effect transistor results in undulations.•An extended Verilog-A model was built to include...
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| Published in: | Solid-state electronics Vol. 184; p. 108060 |
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| Main Authors: | , , , , , |
| Format: | Journal Article |
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01-10-2021
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| Abstract | •Quantum capacitance becomes dominant with high-k ultra-thin dielectrics.•Quantum capacitance in Nanoribbons is influenced by Van-Hove singularities.•The transient mode in an armchair graphene nanoribbon field-effect transistor results in undulations.•An extended Verilog-A model was built to include the quantum capacitance influence.
Graphene Nanoribbons (GNRs) are an emerging candidate to challenge the place of current semiconductor-based technology. In this work, we extend a model for Armchair Graphene Nanoribbons Field-Effect Transistor (AGNRFET) to the high-k dielectrics realm and examine the influences of quantum capacitance on its transient phenomena. The model is coded with Verilog-A and evaluated through SPICE simulations. We have considered a comparison between the extended model with and without the influence of the quantum capacitance. Simulation results show a realistic scenario where influence of the quantum capacitance significantly impacts the transient behaviour in circuit design. This proves the proposed model to be a valuable aid for the circuit design of future graphene-based applications. |
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| AbstractList | •Quantum capacitance becomes dominant with high-k ultra-thin dielectrics.•Quantum capacitance in Nanoribbons is influenced by Van-Hove singularities.•The transient mode in an armchair graphene nanoribbon field-effect transistor results in undulations.•An extended Verilog-A model was built to include the quantum capacitance influence.
Graphene Nanoribbons (GNRs) are an emerging candidate to challenge the place of current semiconductor-based technology. In this work, we extend a model for Armchair Graphene Nanoribbons Field-Effect Transistor (AGNRFET) to the high-k dielectrics realm and examine the influences of quantum capacitance on its transient phenomena. The model is coded with Verilog-A and evaluated through SPICE simulations. We have considered a comparison between the extended model with and without the influence of the quantum capacitance. Simulation results show a realistic scenario where influence of the quantum capacitance significantly impacts the transient behaviour in circuit design. This proves the proposed model to be a valuable aid for the circuit design of future graphene-based applications. |
| ArticleNumber | 108060 |
| Author | Garzón, Esteban Golman, Roman Ngo, Ha-Duong Avnon, Asaf Teman, Adam Lanuzza, Marco |
| Author_xml | – sequence: 1 givenname: Asaf surname: Avnon fullname: Avnon, Asaf email: asaf.avnon@biu.ac.il organization: Emerging Nanoscaled Integrated Circuits and Systems (EnICS) Labs, Faculty of Engineering, Bar-Ilan University, Ramat-Gan 5290002, Israel – sequence: 2 givenname: Roman surname: Golman fullname: Golman, Roman organization: Emerging Nanoscaled Integrated Circuits and Systems (EnICS) Labs, Faculty of Engineering, Bar-Ilan University, Ramat-Gan 5290002, Israel – sequence: 3 givenname: Esteban surname: Garzón fullname: Garzón, Esteban organization: Emerging Nanoscaled Integrated Circuits and Systems (EnICS) Labs, Faculty of Engineering, Bar-Ilan University, Ramat-Gan 5290002, Israel – sequence: 4 givenname: Ha-Duong surname: Ngo fullname: Ngo, Ha-Duong organization: IZM Fraunhofer Institute, Berlin, Germany – sequence: 5 givenname: Marco surname: Lanuzza fullname: Lanuzza, Marco organization: Department of Computer Engineering, Modelling, Electronics and Systems (DIMES), University of Calabria, Rende 87036, Italy – sequence: 6 givenname: Adam surname: Teman fullname: Teman, Adam organization: Emerging Nanoscaled Integrated Circuits and Systems (EnICS) Labs, Faculty of Engineering, Bar-Ilan University, Ramat-Gan 5290002, Israel |
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| Cites_doi | 10.1038/s41586-019-1573-9 10.1038/nnano.2010.89 10.1016/j.apsusc.2020.145448 10.1063/1.99649 10.1016/S0167-9317(02)00977-2 10.1016/j.mee.2004.01.003 10.1007/s12043-013-0556-x 10.1063/1.2776887 10.1109/TDMR.2005.845236 10.1515/ntrev-2016-0099 10.1016/j.microrel.2017.06.056 10.1038/s41563-019-0359-7 10.1109/LED.2008.2005650 10.1109/TNANO.2015.2496158 10.1109/TED.2014.2302372 10.4028/www.scientific.net/SSP.156-158.499 |
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| Keywords | Graphene High-k dielectric Low Power 2D materials Quantum capacitance Armchair graphene nanoribbon field effect transistor (AGNRFET) Tunnel FETs |
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| SubjectTerms | 2D materials Armchair graphene nanoribbon field effect transistor (AGNRFET) Graphene High-k dielectric Low Power Quantum capacitance Tunnel FETs |
| Title | Quantum capacitance transient phenomena in high-k dielectric armchair graphene nanoribbon field-effect transistor model |
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