Low-carrier density sputtered-MoS2 film by H2S annealing for normally-off accumulation-mode FET

Low-carrier density sputtered-MoS2 film by H2S annealing for normally-off accumulation-mode FET

We investigate low-temperature formation process of sputtered-MoS 2 film. The MoS2 film was formed by radio frequency (RF) sputtering. Then the sputtered-MoS 2 was annealed in H2S at from 200 to 400°C. We find that the hydrogen sulfur (H 2 S) annealing compensate for sulfur defects at low temperatur...

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Bibliographic Details
Published in:2017 IEEE Electron Devices Technology and Manufacturing Conference (EDTM) pp. 222 - 223
Main Authors: Shimizu, Jun'ichi, Ohashi, Takumi, Matsuura, Kentaro, Muneta, Iriya, Kakushima, Kuniyuki, Tsutsui, Kazuo, Ikarashi, Nobuyuki, Wakabayashi, Hitoshi
Format: Conference Proceeding
Language:English
Published: IEEE 01-02-2017
Subjects:
Annealing
Charge carrier density
Field effect transistors
Molybdenum
Radio frequency
Sputtering
Sulfur
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Summary:We investigate low-temperature formation process of sputtered-MoS 2 film. The MoS2 film was formed by radio frequency (RF) sputtering. Then the sputtered-MoS 2 was annealed in H2S at from 200 to 400°C. We find that the hydrogen sulfur (H 2 S) annealing compensate for sulfur defects at low temperature significantly, resulting in a lower carrier density of 2-10 16 cm -3 .
DOI:10.1109/EDTM.2017.7947572