Features of the Dynamics of the Photoluminescence Spectrum of the Cu3In5S9 Crystal with a Change in the Intensity of Laser Excitation

• Published in: Optics and spectroscopy Vol. 130; no. 5; pp. 350 - 354
• Main Authors: Guseinov, A. G., Mamedov, R. M., Bairamova, A. I., Javadova, M. M.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01-05-2022; Springer Nature B.V
• Subjects: Crystals; Electrical resistivity; Energy bands; Excitation; Excitation spectra; Excitons; Lasers; Luminescence quenching; Optical Devices; Optics; Photoelectric effect; Photoluminescence; Photonics; Physics; Physics and Astronomy; Radiation; Temperature dependence; Cu; S; photoluminescence; electrical conductivity; In; photocurrent
• ISSN: 0030-400X; 1562-6911
• DOI: 10.1134/S0030400X22060030

Photoluminescence spectra have been studied on the naturally formed surface of a layered Cu
3
-In
5
S
9
crystal when excited by nanosecond laser radiation. At relatively low levels of optical excitation intensity, luminescence quenching was detected near the photon energy of 1.636 eV, in a narrow energy band—118 MeV. This phenomenon is explained by the formation of bound excitons of a triplet nature and their dissociation with the emission of phonons. It is shown that with an increase in the intensity of optical excitation of the crystal, the impurity band of radiation in the crystal disappears. The spectrum of the Cu
3
I-n
5
S
9
photocurrent at 295 K is formed by peaks at energies of 1.53 and 1.81 eV. The lifetime of nonequilibrium electrons through fast centers is ~20 ns. From the temperature dependence of the electrical conductivity of the Cu
3
In
5
S
9
crystal in the range of 110–350 K, the activation energies of two donor levels were determined: 0.28 and 0.76 eV.