Effects of Mn doping on the structural, morphological, electronic and optical properties of ZnO thin films by sol-gel spin coating method: An experimental and DFT+U study

• Published in: Physica. B, Condensed matter Vol. 577; p. 411766
• Main Authors: Amari, R., Deghfel, B., Mahroug, A., Mohamad, Ahmad Azmin, Boukhari, A., Selmi, N.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15-01-2020; Elsevier BV
• Subjects: Antiferromagnetism; Density functional theory; DFT+U; Doping; Grain size; Mechanical properties; Mn-doped ZnO thin films; Optical properties; Sol-gel processes; Sol-gel spin coating method; Spin coating; Substitutional method; Supercell model; Surface roughness; Thin films; Zinc oxide; Zinc oxides; Supercell model; DFT+U; Mn-doped ZnO thin films; Substitutional method; Sol-gel spin coating method
• ISSN: 0921-4526; 1873-2135
• DOI: 10.1016/j.physb.2019.411766

The structural, electronic and optical properties of Mn-doped ZnO thin films were studied using density functional theory (DFT) with Hubbard U method. Supercell model and substitutional method were employed to achieve the considered doping concentrations (x). Antiferromagnetic phase of Zn1−xMnxO (x = 0.125) structure was adopted at different geometry configurations. On the other hand, Zn1−xMnxO (x = 7, 10 and 12.5) thin films, with good uniformity, were fabricated using sol–gel spin coating technique. Both grain size and surface roughness were decreased with x, leading to the decrease of the average transmittance. Calculations revealed that Mn atoms tend to be close to each other around the O atom. Besides, Mn3d states were found to be rarely distributed around Fermi level. Furthermore, Mulliken analysis demonstrated the coexistence of both ionic and covalent bonding. Both materials presented a similar behavior for optical properties with a slight shift toward the lower energy by increasing x.
•DFT + U method was used to study Mn-doped ZnO thin films.•Supercell model and substitutional method were employed.•Antiferromagnetic phase of Zn1−xMnxO (x = 0.125) structure was adopted.•Zn1−xMnxO thin films (x = 7, 10 and 12.5) were fabricated by sol–gel technique.•A comparison was made, wherever possible, between the obtained results.