Galvanomagnetic Properties of Bismuth–Antimony Films under Conditions of Plane Tensile Strain

• Published in: Surface investigation, x-ray, synchrotron and neutron techniques Vol. 15; no. 4; pp. 777 - 780
• Main Authors: Grabov, V. M., Demidov, E. V., Komarov, V. A., Senkevich, S. V., Suslov, A. V.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01-07-2021; Springer Nature B.V
• Subjects: Antimony; Approximation; Bismuth; Borosilicate glass; Carrier density; Chemical potential; Chemistry and Materials Science; Conduction bands; Crystal structure; Current carriers; Electromagnetism; Glass substrates; Hall effect; Magnetoresistance; Magnetoresistivity; Materials Science; Mathematical analysis; Single crystals; Surfaces and Interfaces; Tensile strain; Thin Films; Vacuum thermal evaporation; galvanomagnetic properties; glass; antimony; two-band approximation; deformation; tensile strain; thin films; bismuth
• ISSN: 1027-4510; 1819-7094
• DOI: 10.1134/S1027451021040066

The results of studying the resistivity, magnetoresistance, and Hall coefficient of thin films of bismuth and the bismuth–antimony system on a borosilicate-glass substrate under plane tensile strain are presented. Deformation is created by a specially developed method that allows a change in its magnitude directly during measurement of the film properties. The films are obtained by thermal evaporation in vacuum. Varying the technological modes made it possible to obtain films of various structures: from small blocks to single crystal. Based on the experimental results, within the framework of the two-band approximation, the concentrations of charge carriers and the positions of the energy extrema of the valence and conduction bands relative to the chemical potential level are calculated. It is shown that the two-band approximation is insufficient for describing the properties of films of the studied compositions under plane tensile strain.