Conditions for attaining the maximum values of thermoelectric power in intermetallic semiconductors of the MgAgAs structural type
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Published in: | Semiconductors (Woodbury, N.Y.) Vol. 40; no. 11; pp. 1275 - 1281 |
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Main Authors: | , , , , , , , |
Format: | Journal Article |
Language: | English |
Published: |
01-11-2006
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Online Access: | Get full text |
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ISSN: | 1063-7826 1090-6479 |
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DOI: | 10.1134/S1063782606110054 |