Unified Charge Control Model for Back-Gated 2-D Field Effect Transistors

• Published in: IEEE transactions on electron devices Vol. 71; no. 1; pp. 884 - 889
• Main Authors: Mounir, Ahmed, Iniguez, Benjamin, Lime, Francois, Kloes, Alexander, Knobloch, Theresia, Grasser, Tibor
• Format: Journal Article
• Language: English
• Published: New York IEEE 01-01-2024; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: 2-D FETs; 2-D materials; Data models; dc compact model; Field effect transistors; Integrated circuit modeling; Lambert W function; Logic gates; Mathematical models; Molybdenum disulfide; MoS₂ single (back) gate field effect transistor (FET); Numerical models; Semiconductor device modeling; Semiconductor devices; Simulators; Two dimensional analysis; unified charge control model (UCCM)
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2023.3338585

A physics-based analytical dc compact model for single back-gated MoS2 field effect transistors (FETs) is presented. The model is developed by calculating the charge inside the 2-D layer which is expressed in terms of the Lambert W function that recently has become the standard in SPICE simulators. The current is then calculated in terms of the charge densities at the drain and source ends of the channel. A new mobility model is presented to account for the observed superlinear current increase above a certain gate voltage. Despite the simplicity of the model, it shows very good agreement with the experimental data as well as the possibility to be extended to model the double-gate MoS2 FETs.