Bringing High-Performance GaInNAsSb/GaAs SOAs to True Data Applications

Bringing High-Performance GaInNAsSb/GaAs SOAs to True Data Applications

We experimentally demonstrate the high-speed data processing capabilities of a GaInNAsSb semiconductor optical amplifier operating at 1.55 μm. The investigated structure exhibits good thermal characteristics and fast gain dynamics with 10%-90% recovery time of 55 ps. Successful wavelength conversion...

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Bibliographic Details
Published in:IEEE photonics technology letters Vol. 27; no. 16; pp. 1691 - 1694
Main Authors: Giannoulis, Giannis, Korpijarvi, Ville-Markus, Iliadis, Nikos, Makela, Jaakko, Viheriala, Jukka, Apostolopoulos, Dimitrios, Guina, Mircea, Avramopoulos, Hercules
Format: Journal Article
Language:English
Published: New York IEEE 15-08-2015
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects:
Bit error rate
Dilute Nitrides
Gain
Gallium arsenide
Optical signal processing
Optical wavelength conversion
Photonic Integration
Semiconductor Optical Amplifier (SOA)
Semiconductor optical amplifiers
Temperature measurement
Wavelength Conversion
wavelength conversion
Photonic integration
dilute nitrides
semiconductor optical amplifier (SOA)
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Summary:We experimentally demonstrate the high-speed data processing capabilities of a GaInNAsSb semiconductor optical amplifier operating at 1.55 μm. The investigated structure exhibits good thermal characteristics and fast gain dynamics with 10%-90% recovery time of 55 ps. Successful wavelength conversion of 10-Gb/s signals is reported. A maximum power penalty of <;2.4 dB for return to zero formatting and of 1.9 dB for nonreturn to zero is demonstrated.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2015.2436697