Tunneling assisted p-contact free GaN-InGaN green light-emitting diodes

Tunneling assisted p-contact free GaN-InGaN green light-emitting diodes

The effects of bottom tunnel junction (TJ) on optoelectronic characteristics of green light-emitting diodes are analyzed numerically. Our proposed LED has enhanced internal quantum efficiency (IQE), radiative recombination rate, and carrier concentration in comparison to reference conventional LED....

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Bibliographic Details
Published in:Journal of Information Display pp. 1 - 6
Main Authors: Bashir, Jamshad, Usman, Muhammad, Ali, Shazma, Mustafa, Laraib
Format: Journal Article
Language:English
Published: Taylor & Francis Group 13-07-2024
Subjects:
electric field
green gap
Tunnel junction
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Description
Summary:The effects of bottom tunnel junction (TJ) on optoelectronic characteristics of green light-emitting diodes are analyzed numerically. Our proposed LED has enhanced internal quantum efficiency (IQE), radiative recombination rate, and carrier concentration in comparison to reference conventional LED. The IQE increases by 17%, droop is reduced by 28%, and emission intensity is nearly twice as high as than reference design. The improved optical properties of the proposed structure are due to excellent carrier confinement and altered spontaneous polarization in the vicinity of the active region by TJ.
ISSN:1598-0316
2158-1606
DOI:10.1080/15980316.2024.2370272