Electronic and Magnetic Properties of Doped Silicon Carbide Nanosheet Under an External Electric Field

• Published in: International journal of theoretical physics Vol. 62; no. 7
• Main Authors: Salem, Mohammad A., Talla, Jamal A., Al-Moumani, Alaa L.
• Format: Journal Article
• Language: English
• Published: New York Springer US 27-06-2023
• Subjects: Elementary Particles; Mathematical and Computational Physics; Physics; Physics and Astronomy; Quantum Field Theory; Quantum Physics; Theoretical; Band structure; Transition metals; Electronic properties; Density functional theory; External electric field; Silicon carbide nanosheet; Magnetic properties
• ISSN: 1572-9575; 1572-9575
• DOI: 10.1007/s10773-023-05415-8

The electronic and magnetic properties of silicon carbide nanosheets were investigated in this study, with particular attention given to the effects of doping with transition metal atoms and applying an external electric field. Our findings point out that introducing dopants, such as Mn, Co, and Zn, can notably reduce the band gap of the pristine structure from 2.6 eV to 0.752 eV, 0.261 eV, and 0.898 eV, respectively. Moreover, the inclusion of Mn and Co dopants results in magnetization. On the other hand, applying a transverse external electric field up to 7 V/nm leads to a semiconductor-to-metal phase transition. Although the applied electric field has a minor effect on the Mn-doped structure’s magnetic moment, it slightly decreases the magnetic moment of the magnetized Co-doped one.