CMOS circuits for peripheral circuit integrated poly-Si TFT LCD fabricated at low temperature below 600 degrees C

• Published in: IEEE transactions on electron devices Vol. 38; no. 6; pp. 1303 - 1309
• Main Authors: Takabatake, M., Ohwada, J., Ono, Y.A., Ono, K., Mimura, A., Konishi, N.
• Format: Journal Article
• Language: English
• Published: IEEE 01-06-1991
• Subjects: Circuits; Clocks; Energy consumption; Frequency; Glass; Gray-scale; Power supplies; Shift registers; Temperature; Thin film transistors
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/16.81621

CMOS shift registers, buffers, and gray-scale representation circuits for integrated peripheral drive circuits of poly-Si TFT LCDs were fabricated at temperatures below 600 degrees C on a glass substrate. The maximum operation frequency of the CMOS shift register was 1.25 MHz. The total power consumption of the 10 stage CMOS shift registers at a clock frequency of 46.8 kHz and a power supply voltage of 20 V was 10 mu W, which is three orders of magnitude smaller than that of 10-stage nMOS shift registers. The rise and fall times of the CMOS buffers were proportional to the inverse of the channel width, and the write time of the gray-scale representation circuits was proportional to the line memory capacitance.< >