Noticeably enhanced photosensing properties of Fe-doped Bi2S3 thin films developed by nebulizer spray pyrolysis technique for photosensor applications

• Published in: Sensors and actuators. A. Physical. Vol. 345; p. 113759
• Main Authors: Rajeswari, S., Ibrahim, M. Mohamed, Poul Raj, I. Loyola, Hakami, Jabir, Imran, Mohd, AlFaify, S., Shkir, Mohd
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 01-10-2022; Elsevier BV
• Subjects: Bi2S3 thin films; Bismuth sulfides; Conductivity; Crystallites; Diffraction; Doped films; Electrical resistivity; Energy gap; External quantum efficiency; Fe Doping; Glass substrates; Mechanical properties; Photo-detecting; Photodetector; Quantum efficiency; Responsivity; Semiconductor doping; Sensors; Spray pyrolysis; Thin films; Fe Doping; Photo-detecting; Bi2S3 thin films; External quantum efficiency; Photodetector; Responsivity
• ISSN: 0924-4247; 1873-3069
• DOI: 10.1016/j.sna.2022.113759

The current study uses the nebulized spray pyrolysis (NSP) approach to study the effect on crystalline, morphological, electrical conductivity, and photo detector properties of Bi2S3 thin films through Fe doping produced on amorphous glass substrates. The orthorhombic structure of Bi2S3 thin films for the pristine and Fe doped Bi2S3 thin films was confirmed by X-ray diffraction studies. The XRD data of the samples were used to calculate crystallite size value and maximum crystallite size value of 38 nm was observed for 2% Fe-doped Bi2S3 film. FESEM image of 2% Fe-doped film shows the distribution of uniform grains. With the increase in concentration of the Fe dopants from 0% to 5%, the energy gap value changes from 2.2 to 2.47 eV. The 2% Fe-doped Bi2S3 film possesses highest responsivity (9.60 × 10-2 AW-1), external quantum efficiency (22.4%), and detectivity (1.34 × 1010 Jones) properties suggests that the sample might be better suited for the application of the photo detectors.
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•Novel Bi2S3 films with diverse iron concentrations from 1 to 5 wt% were developed.•FESEM image of 2% Fe-doped film shows the distribution of uniform grains.•As the Fe doping concentration is increased from 0% to 5%, the optical band gap value changes from 2.2 to 2.47 eV.•The 2% Fe-doped Bi2S3 film may be suitable for optoelectronic devices due to its high responsivity (9.60 × 10-2 AW-1).•A maximum EQE (22.4%), and detectivity (1.34 × 1010 Jones) was noticed for Fe:Bi2S3 film.