Ultra-low resistance n+GaN contacts for GaN HEMT applications using MOCVD selective area epitaxy in N2 carrier gas

• Published in: AIP advances Vol. 12; no. 3; pp. 035201 - 035201-5
• Main Authors: Li, Jizhong, Brabant, Paul, Hannan, Dan, Vasen, Tim, Afroz, Shamima, Nagamatsu, Ken, Chang, Josei, Shea, Patrick, Lawson, David, Howell, Rob
• Format: Journal Article
• Language: English
• Published: Melville American Institute of Physics 01-03-2022; AIP Publishing LLC
• Subjects: Carrier gases; Contact resistance; Electric contacts; Electrical measurement; Epitaxy; Gallium nitrides; High electron mobility transistors; Low resistance; Metalorganic chemical vapor deposition; Morphology; Organic chemicals; Organic chemistry; Secondary ion mass spectrometry; Silicon substrates; Thin films; Transmission lines
• ISSN: 2158-3226; 2158-3226
• DOI: 10.1063/5.0082345

Low resistance n+GaN contact materials were experimentally studied for GaN HEMT applications by selective area epitaxy regrowth on a patterned SiC substrate. Epitaxy was performed by metal organic chemical vapor deposition using 100% H2 or 100% N2 as the carrier gas. Thin film characterization demonstrated that n+GaN grown in N2 carrier gas has a superior morphology with improved crystalline quality to that grown in H2 carrier gas. The results also indicated that the surface morphology of n+GaN grown in N2 carrier gas is less sensitive to mask pattern density and micro-loading effects with Si doping concentrations up to 1 × 1020/cm3. Secondary ion mass spectrometry analysis shows that C and O impurity levels in n+GaN are one order of magnitude lower with N2 carrier gas than with H2. The electrical measurement of transmission line model structures shows an n+GaN sheet resistance of 15 Ω/sq and an Ohmic metal to n+GaN contact resistance of 0.02 Ω-mm for structures grown in N2 carrier gas. These values represent 7.1× and 2.5× improvements compared to H2 carrier gas.