Optimization of tin based perovskite solar cell employing CuSbS2 as HTL: A numerical simulation approach

• Published in: Optical materials Vol. 134; p. 113060
• Main Authors: Sharma, Divya, Mehra, Rajesh, Raj, Balwinder
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-12-2022
• Subjects: Acceptor density; C60; CH3NH3SnI3; CuSbS2; Electron affinity; Fullerene; Fullerene; CuSbS2; CH3NH3SnI3; C60; Acceptor density; Electron affinity
• ISSN: 0925-3467; 1873-1252
• DOI: 10.1016/j.optmat.2022.113060

The expeditious progresses in the domain of organo-metallic halide perovskite solar cells has resulted in PCE of more than 25.5%. However, their extensive utilization and fully fledged commercialization is currently restricted owing to the existence of expensive hole transport layer (HTL) viz Spiro-OmeTAD in the novel devices. In this paper, a low cost and easily available materials i.e. CuSbS2 and fullerene (C60) are endeavored as HTL and ETL respectively, by utilizing SCAPS 1D simulator, which can also yield high solar cell performance. In this context, the analysis of Spiro-OmeTAD, CuSbS2 as HTLs and TiO2, C60 as ETLs has been validated. In addition, effect of thickness of HTLs on perovskite solar cells using CH3NH3SnI3 as light harvester & C60 as hole inhibiting layer/electron transport layer (ETL) has been also examined. The recommended simulation reveals that using 20 nm of CuSbS2 layer can outperform Spiro-OmeTAD as HTL for cell fabrication. It has been observed that by employing proposed perovskite solar cell configuration FTO/C60/CH3NH3SnI3/CuSbS2/Au, an efficiency (PCE) of 26.05% associated with fill factor (FF) of 82.98%, short circuit current (Jsc) of 31.646 mA/cm2 & open circuit voltage (Voc) of 0.9918 V can be yielded which assures exhibition of better solar cell performance than the existing solar cell.
•A comparative analysis between existing & proposed solar cell using same perovskite but different ETL & HTL materials.•Characterization of solar cell parameters of proposed device w.r.t thickness, doping concentration, defect density & thickness.•By integrating CuSbS2, C60 with CH3NH3SnI3 in the proposed cell exibits higher PCE as compared to PCE of existing one.