Copper-incorporated dendritic mesoporous silica nanospheres and enhanced chemical mechanical polishing (CMP) performance via Cu2+/H2O2 heterogeneous Fenton-like system

• Published in: Applied surface science Vol. 601; p. 154262
• Main Authors: Chen, Yang, Wei, Aoli, Ma, Xiangyu, Tianyu, Wang, Chen, Ailian
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01-11-2022
• Subjects: Chemical mechanical polishing/planarization; Copper incorporation; Cu2+-catalyzed Fenton reaction; Heterogeneous Fenton-like system; Mesoporous silica; Copper incorporation; Cu2+-catalyzed Fenton reaction; Chemical mechanical polishing/planarization; Heterogeneous Fenton-like system; Mesoporous silica
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2022.154262

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•Copper-doped dendritic mesoporous SiO2 nanospheres were developed as novel abrasives.•Cu-doped D-mSiO2 afforded nearly defect-free and highly planarized dielectric films.•Cu2+/H2O2 heterogeneous Fenton-like system contributed to enhanced removal efficiency.•The synergy of chemical and mechanical actions over Cu-involved D-mSiO2 was discussed.•Cu2+-catalyzed Fenton-like reaction can be applied in other free radical-assisted CMP.
The structure-dependent properties of abrasive particles play an extremely important role in atomic and close-to-atomic scale manufacturing. In this work, copper-incorporated dendritic mesoporous silica (D-mSiO2) nanoparticles were fabricated via a simple synthesis strategy of solvothermal post-treatment approach. As revealed by XRD, FTIR, HAADF-STEM and the corresponding EDX elemental mapping, some Cu ions were converted into CuO nanocrystals, and others were incorporated into D-mSiO2 frameworks. High-resolution AFM confirmed that the Cu- modified D-mSiO2 abrasives afforded nearly defect-free and atomically planarized dielectric film surfaces with angstrom-level roughness, and at the same time, enabled a significant improvement in removal efficiency. The involved Cu2+-catalyzed heterogeneous Fenton-like reaction in the presence of H2O2 might be responsible for the productions of highly reactive species in polishing slurries, thus contributing to the hydration layer formation and the material removal enhancement. The developed Cu-modified D-mSiO2 material is an efficient candidate for functional abrasive systems with better surface planarization capacity and superior material removal rate. Furthermore, the Cu2+/H2O2 heterogeneous Fenton-like system can be expected to a promising method to supplement in existing free radical-assisted polishing.