Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN-coated sapphire substrates

• Published in: Applied physics letters Vol. 42; no. 5; pp. 427 - 429
• Main Authors: Yoshida, S., Misawa, S., Gonda, S.
• Format: Journal Article
• Language: English
• Published: 01-03-1983
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.93952

The electrical and luminescent properties of the GaN epitaxial films grown on AlN-coated sapphire by reactive molecular beam epitaxy have been studied. The GaN films on AlN epitaxial films have larger Hall mobilities and show more intense cathodoluminescence peaks at a wavelength of 360 nm than those of the GaN films grown directly on sapphire, which suggests that the crystal qualities of GaN films are improved by use of AlN-coated sapphire as substrates. The lattice matching and small difference of the thermal expansion coefficients between GaN and AlN are considered to result in the improvements.