Low pressure metalorganic chemical vapor deposition of AIN over sapphire substrates

• Published in: Applied physics letters Vol. 61; no. 21; pp. 2539 - 2541
• Main Authors: ASIF KHAN, M, KUZNIA, J. N, SKOGMAN, R. A, OLSON, D. T, MAC MILLAN, M, CHOYKE, W. J
• Format: Journal Article
• Language: English
• Published: Melville, NY American Institute of Physics 23-11-1992
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Atomic layer method; Transition metal Compounds; Epitaxy; Organometallic compound; Cathodoluminescence; Experimental study; X ray diffraction; Chemical vapor deposition; Single crystal; Inorganic compound; Thin film; Growth from vapor; Aluminium Nitrides; Optical transmission; Low pressure; Kinetics
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.108144

In this letter we report the deposition of high quality single-crystal films of AIN over basal plane sapphire substrates. A conventional low pressure metalorganic chemical vapor deposition (LPMOCVD) system was used for all the growths reported here. We present the results of conventional and switched atomic layer epitaxial (SALE) depositions. Conventional LPMOCVD yielded single-crystal AIN films at temperatures in excess of 750 °C. The ALE process in contrast produced extremely smooth single-crystal AIN layers at temperatures as low as 450 °C. To the best of our knowledge this is the lowest ever reported for chemical vapor deposition of single-crystal AIN. X-ray and optical characterization data are presented to compare the quality of the material resulting from the two deposition techniques.