Effect of sintering temperature on properties of Ba (Cu1/2W1/2) O3 high dielectric ceramics
Ba (Cu 1/2 W 1/2 ) O 3 (BCW) ceramics were prepared and their dielectric properties were investigated for energy storage applications. A low pre-sintering temperature of 930 °C was used to achieve favorable grain crystallinity, and a sintering temperature of 1160 °C was used to obtain a high dielect...
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Published in: | Journal of materials science. Materials in electronics Vol. 34; no. 13; p. 1090 |
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Main Authors: | , , |
Format: | Journal Article |
Language: | English |
Published: |
New York
Springer US
01-05-2023
Springer Nature B.V |
Subjects: | |
Online Access: | Get full text |
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Summary: | Ba (Cu
1/2
W
1/2
) O
3
(BCW) ceramics were prepared and their dielectric properties were investigated for energy storage applications. A low pre-sintering temperature of 930 °C was used to achieve favorable grain crystallinity, and a sintering temperature of 1160 °C was used to obtain a high dielectric constant. A dielectric constant of 10
5
was observed at 10 Hz and 400 °C. Moreover, the BCW ceramics exhibited good microstructure and optimal temperature stability over a wide temperature range from − 100 to 500 °C, and the internal barrier layer capacitance mechanism was considered to be the reason for their high dielectric performance. The surfactant PEG was found to be the most effective in enhancing the dielectric properties of BCW ceramics. This study demonstrates the potential of this material for high-density energy storage applications. |
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ISSN: | 0957-4522 1573-482X |
DOI: | 10.1007/s10854-023-10484-w |