Electrical Properties of Pb(Zr,Ti)O 3 Thin Film Capacitors on Pt and Ir Electrodes

• Published in: Japanese Journal of Applied Physics Vol. 34; no. 9S; p. 5184
• Main Authors: Takashi Nakamura, Takashi Nakamura, Yuichi Nakao, Yuichi Nakao, Akira Kamisawa, Akira Kamisawa, Hidemi Takasu, Hidemi Takasu
• Format: Journal Article
• Language: English
• Published: 01-09-1995
• ISSN: 0021-4922; 1347-4065
• DOI: 10.1143/JJAP.34.5184

Pb(Zr
x
Ti
1-
x
)O
3
(PZT) thin films were prepared on Ir/IrO
2
and Pt/IrO
2
electrodes. We have already reported that fatigue properties of PZT thin films were improved by using these electrodes due to barrier effects of IrO
2
. In this present paper we describe a study of the imprint characteristics of PZT thin films on these electrodes. There is little difference in fatigue properties between the PZT films on Pt/IrO
2
and Ir/IrO
2
. However, we find some difference in imprint characteristics between the PZT films on these electrodes. In the case of Ir/IrO
2
electrode, improvements in the electrical properties are observed in the measurements of the imprint characteristics. Moreover, improvements in imprint characteristics were also obtained with good (111)-axis orientation of PZT films when Pt
x
Ir
1-
x
/IrO
2
electrodes were used.