Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion
The features of transient processes under the field effect in PbSnTe:In films with a variation in the current up to a factor of 10 5 are studied at helium temperatures. These features qualitatively correspond to a model, in which a high concentration of traps with different parameters is present on...
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Published in: | Semiconductors (Woodbury, N.Y.) Vol. 53; no. 9; pp. 1182 - 1186 |
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Main Authors: | , , , , , , , , , , |
Format: | Journal Article |
Language: | English |
Published: |
Moscow
Pleiades Publishing
01-09-2019
Springer Nature B.V |
Subjects: | |
Online Access: | Get full text |
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Summary: | The features of transient processes under the field effect in PbSnTe:In films with a variation in the current up to a factor of 10
5
are studied at helium temperatures. These features qualitatively correspond to a model, in which a high concentration of traps with different parameters is present on the PbSnTe:In surface. The role of the surface is confirmed by a strong variation in the experimental characteristic after the chemical removal of native oxides from the PbSnTe:In surface and its passivation by an Al
2
O
3
layer. |
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ISSN: | 1063-7826 1090-6479 |
DOI: | 10.1134/S1063782619090094 |