Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion

The features of transient processes under the field effect in PbSnTe:In films with a variation in the current up to a factor of 10 5 are studied at helium temperatures. These features qualitatively correspond to a model, in which a high concentration of traps with different parameters is present on...

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) Vol. 53; no. 9; pp. 1182 - 1186
Main Authors: Klimov, A. E., Akimov, A. N., Akhundov, I. O., Golyashov, V. A., Gorshkov, D. V., Ishchenko, D. V., Sidorov, G. Yu, Suprun, S. P., Tarasov, A. S., Epov, V. S., Tereshchenko, O. E.
Format: Journal Article
Language:English
Published: Moscow Pleiades Publishing 01-09-2019
Springer Nature B.V
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Summary:The features of transient processes under the field effect in PbSnTe:In films with a variation in the current up to a factor of 10 5 are studied at helium temperatures. These features qualitatively correspond to a model, in which a high concentration of traps with different parameters is present on the PbSnTe:In surface. The role of the surface is confirmed by a strong variation in the experimental characteristic after the chemical removal of native oxides from the PbSnTe:In surface and its passivation by an Al 2 O 3 layer.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782619090094