Tunnel-recombination currents and electroluminescence efficiency in InGaN/GaN LEDs

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Bibliographic Details
Published in:	Semiconductors (Woodbury, N.Y.) Vol. 39; no. 5; pp. 594 - 599
Main Authors:	Bochkareva, N. I., Zhirnov, E. A., Efremov, A. A., Rebane, Yu. T., Gorbunov, R. I., Shreter, Yu. G.
Format:	Journal Article
Language:	English
Published:	01-01-2005
Online Access:	Get full text
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ISSN:	1063-7826 1090-6479
DOI:	10.1134/1.1923571