MgO /p- GaN enhancement mode metal-oxide semiconductor field-effect transistors

• Published in: Applied physics letters Vol. 84; no. 15; pp. 2919 - 2921
• Main Authors: Irokawa, Y., Nakano, Y., Ishiko, M., Kachi, T., Kim, J., Ren, F., Gila, B. P., Onstine, A. H., Abernathy, C. R., Pearton, S. J., Pan, C.-C., Chen, G.-T., Chyi, J.-I.
• Format: Journal Article
• Language: English
• Published: 12-04-2004
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.1704876

We report the initial demonstration of an enhancement mode MgO/p-GaN metal-oxide-semiconductor field-effect transistor (MOSFET) utilizing Si+ ion-implanted regions under the source and drain to provide a source of minority carriers for inversion. The breakdown voltage for an 80-nm-thick MgO gate dielectric was ∼14 V, corresponding to a breakdown field strength of 1.75 MV cm−1 and the p-n junction formed between the p-epi and the source had a reverse breakdown voltage >15 V. Inversion of the channel was achieved for gate voltages above 6 V. The maximum transconductance was 5.4 μS mm−1 at a drain-source voltage of 5 V, comparable to the initial values reported for GaAs MOSFETs.