Electron-stimulated hydrogen desorption from diamond surfaces and its influence on the low-pressure synthesis of diamond

Electron-stimulated hydrogen desorption from diamond surfaces and its influence on the low-pressure synthesis of diamond

A total cross section σD=(5±2.6)×10−18 cm2 is measured for electron-stimulated desorption (ESD) of deuterium from a boron-doped, deuterated diamond(100) surface at 5 eV incident electron energy. This large ESD cross section means a significant contribution of ESD to hydrogen abstraction reactions in...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics letters Vol. 81; no. 26; pp. 5027 - 5029
Main Authors: Goeden, C., Dollinger, G.
Format: Journal Article
Language:English
Published: 23-12-2002
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A total cross section σD=(5±2.6)×10−18 cm2 is measured for electron-stimulated desorption (ESD) of deuterium from a boron-doped, deuterated diamond(100) surface at 5 eV incident electron energy. This large ESD cross section means a significant contribution of ESD to hydrogen abstraction reactions in microwave-driven chemical vapor deposition of diamond. The ESD cross section decreases when changing to a nitrogen-doped diamond. This change is suggested to be the reason for the reported influence of small concentrations of nitrogen or boron added to the process gas on diamond growth.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1526460