A study of the effect of oxygen on the intensity of erbium photoluminescence in amorphous SiOx:(H, Er) films formed by DC magnetron sputtering

A study of the effect of oxygen on the intensity of erbium photoluminescence in amorphous SiOx:(H, Er) films formed by DC magnetron sputtering

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) Vol. 37; no. 7; pp. 825 - 831
Main Authors: Undalov, Yu. K., Terukov, E. I., Gusev, O. B., Kudoyarova, V. Kh
Format: Journal Article
Language:English
Published: 01-07-2003
Online Access:Get full text
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Description
ISSN:1063-7826
1090-6479
DOI:10.1134/1.1592859