Electron surface states in short-period superlattices: (GaAs) 2/(AlAs) 2(1 0 0)- c(4 × 4)

• Published in: Surface science Vol. 600; no. 18; pp. 3646 - 3649
• Main Authors: Jiříček, P., Cukr, M., Bartoš, I., Adell, M., Strasser, T., Schattke, W.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Lausanne Elsevier B.V 15-09-2006; Amsterdam Elsevier Science; New York, NY
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Gallium arsenide; Molecular beam epitaxy; Photoelectron spectroscopy; Physics; Semiconductor superlattices; Surface states; Synchrotron radiation; Molecular beam epitaxy; Semiconductor superlattices; Gallium arsenide; Photoelectron spectroscopy; Synchrotron radiation; Surface states; Gallium arsenides; Film growth
• ISSN: 0039-6028; 1879-2758
• DOI: 10.1016/j.susc.2006.01.069

The electronic structure of (GaAs)
2/(AlAs)
2(1
0
0)-
c(4
×
4) superlattice surfaces was studied by means of angular-resolved photoelectron spectroscopy (ARUPS) in the photon energy range 20–38
eV. Four samples with different surface termination layers were grown and As-capped by molecular beam epitaxy (MBE). ARUPS measurements were performed on decapped samples with perfect
c(4
×
4) reconstructed surfaces. An intensive surface state was, for the first time, observed below the top of the valence band. This surface state was found to shift with superlattices’ different surface termination in agreement with theoretical predictions.