Zinc telluride epilayers and CdZnTe/ZnTe quantum wells grown by molecular-beam epitaxy on GaAs(100) substrates using solid-phase crystallization of an amorphous ZnTe seed layer

Zinc telluride epilayers and CdZnTe/ZnTe quantum wells grown by molecular-beam epitaxy on GaAs(100) substrates using solid-phase crystallization of an amorphous ZnTe seed layer

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Bibliographic Details
Published in:Semiconductors (Woodbury, N.Y.) Vol. 33; no. 7; pp. 744 - 748
Main Authors: Kozlovskii, V. I., Krysa, A. B., Sadof’ev, Yu. G., Tur’yanskii, A. G.
Format: Journal Article
Language:English
Published: 01-07-1999
Online Access:Get full text
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Description
ISSN:1063-7826
1090-6479
DOI:10.1134/1.1187774