Wavelength control from 1.25 to 1.4 μm in InxGa1−xAs quantum dot structures grown by metal organic chemical vapor deposition

Wavelength control from 1.25 to 1.4 μm in InxGa1−xAs quantum dot structures grown by metal organic chemical vapor deposition

This letter reports on the realization of long-wavelength InGaAs quantum dots (QDs) fabricated by metal organic chemical vapor deposition. By controlling the In incorporation in the QD layers and/or in the barrier embedding the QDs, we are able to tune the wavelength emission continuously from 1.25...

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Bibliographic Details
Published in:Applied physics letters Vol. 78; no. 10; pp. 1382 - 1384
Main Authors: Passaseo, A., Maruccio, G., De Vittorio, M., Rinaldi, R., Cingolani, R., Lomascolo, M.
Format: Journal Article
Language:English
Published: 05-03-2001
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Summary:This letter reports on the realization of long-wavelength InGaAs quantum dots (QDs) fabricated by metal organic chemical vapor deposition. By controlling the In incorporation in the QD layers and/or in the barrier embedding the QDs, we are able to tune the wavelength emission continuously from 1.25 to 1.4 μm at room temperature. Efficient stacking of dots emitting at 1.3 μm is also demonstrated.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.1352698