Convergent beam electron-diffraction investigation of lattice mismatch and static disorder in GaAs/GaAs1−xNx intercalated GaAs/GaAs1−xNx:H heterostructures

• Published in: Applied physics letters Vol. 101; no. 11
• Main Authors: Frabboni, S., Grillo, V., Gazzadi, G. C., Balboni, R., Trotta, R., Polimeni, A., Capizzi, M., Martelli, F., Rubini, S., Guzzinati, G., Glas, F.
• Format: Journal Article
• Language: English
• Published: 10-09-2012
• Subjects: Beams (radiation); Disorders; Gallium arsenide; Gallium arsenides; Heterostructures; Hydrogen storage; Nitrides; Semiconductors
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.4752464

Hydrogen incorporation in diluted nitride semiconductors dramatically modifies the electronic and structural properties of the crystal through the creation of nitrogen-hydrogen complexes. We report a convergent beam electron-diffraction characterization of diluted nitride semiconductor-heterostructures patterned at a sub-micron scale and selectively exposed to hydrogen. We present a method to determine separately perpendicular mismatch and static disorder in pristine and hydrogenated heterostructures. The roles of chemical composition and strain on static disorder have been separately assessed.