Giant tunneling magnetoresistance up to 330% at room temperature in sputter deposited Co2FeAl/MgO/CoFe magnetic tunnel junctions

Giant tunneling magnetoresistance up to 330% at room temperature in sputter deposited Co2FeAl/MgO/CoFe magnetic tunnel junctions

Magnetoresistance ratio up to 330% at room temperature (700% at 10 K) has been obtained in a spin-valve-type magnetic tunnel junction (MTJ) consisting of a full-Heusler alloy Co2FeAl electrode and a MgO tunnel barrier fabricated on a single crystal MgO (001) substrate by sputtering method. The outpu...

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Bibliographic Details
Published in:Applied physics letters Vol. 95; no. 18
Main Authors: Wang, Wenhong, Sukegawa, Hiroaki, Shan, Rong, Mitani, Seiji, Inomata, Koichiro
Format: Journal Article
Language:English
Published: 02-11-2009
Online Access:Get full text
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Summary:Magnetoresistance ratio up to 330% at room temperature (700% at 10 K) has been obtained in a spin-valve-type magnetic tunnel junction (MTJ) consisting of a full-Heusler alloy Co2FeAl electrode and a MgO tunnel barrier fabricated on a single crystal MgO (001) substrate by sputtering method. The output voltage of the MTJ at one-half of the zero-bias value was found to be as high as 425 mV, which is the largest reported to date in MTJs using Heusler alloy electrodes. The present finding suggests that Co2FeAl may be one of the most promising candidates for future spintronics devices applications.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.3258069