Relaxation of an epitaxial InGaAs film on a thin twist-bonded (100) GaAs substrate
A 30 nm (100) GaAs layer was transferred by twist wafer bonding to a (100) GaAs handling wafer. A similar structure was proposed in the literature as a “compliant substrate.” Transmission electron microscopy and x-ray diffraction of 40 and 300 nm epitaxial InGaAs films (0.5% misfit) showed no eviden...
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| Published in: | Applied physics letters Vol. 76; no. 6; pp. 703 - 705 |
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| Main Authors: | , , , |
| Format: | Journal Article |
| Language: | English |
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07-02-2000
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| Abstract | A 30 nm (100) GaAs layer was transferred by twist wafer bonding to a (100) GaAs handling wafer. A similar structure was proposed in the literature as a “compliant substrate.” Transmission electron microscopy and x-ray diffraction of 40 and 300 nm epitaxial InGaAs films (0.5% misfit) showed no evidence of a relaxation mechanism specifically attributed to a compliant substrate. The 40 nm film was nearly pseudomorphic without any evidence of a relaxation mechanism, like grain-boundary sliding. The possibility of grain-boundary slip along the twist-bonded interface is discussed. |
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| AbstractList | A 30 nm (100) GaAs layer was transferred by twist wafer bonding to a (100) GaAs handling wafer. A similar structure was proposed in the literature as a “compliant substrate.” Transmission electron microscopy and x-ray diffraction of 40 and 300 nm epitaxial InGaAs films (0.5% misfit) showed no evidence of a relaxation mechanism specifically attributed to a compliant substrate. The 40 nm film was nearly pseudomorphic without any evidence of a relaxation mechanism, like grain-boundary sliding. The possibility of grain-boundary slip along the twist-bonded interface is discussed. |
| Author | Gösele, U. Senz, St Kästner, G. Gottschalch, V. |
| Author_xml | – sequence: 1 givenname: St surname: Senz fullname: Senz, St – sequence: 2 givenname: G. surname: Kästner fullname: Kästner, G. – sequence: 3 givenname: U. surname: Gösele fullname: Gösele, U. – sequence: 4 givenname: V. surname: Gottschalch fullname: Gottschalch, V. |
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| Cites_doi | 10.1116/1.590166 10.1063/1.369514 10.1063/1.341232 10.1002/pssa.2210780214 10.1116/1.586944 10.1103/PhysRevLett.79.869 10.1002/pssa.2210790121 10.1063/1.123075 10.1103/PhysRevLett.76.1284 10.1063/1.118669 10.1063/1.119642 10.1063/1.366353 |
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| Title | Relaxation of an epitaxial InGaAs film on a thin twist-bonded (100) GaAs substrate |
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