Relaxation of an epitaxial InGaAs film on a thin twist-bonded (100) GaAs substrate

Relaxation of an epitaxial InGaAs film on a thin twist-bonded (100) GaAs substrate

A 30 nm (100) GaAs layer was transferred by twist wafer bonding to a (100) GaAs handling wafer. A similar structure was proposed in the literature as a “compliant substrate.” Transmission electron microscopy and x-ray diffraction of 40 and 300 nm epitaxial InGaAs films (0.5% misfit) showed no eviden...

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Bibliographic Details
Published in:Applied physics letters Vol. 76; no. 6; pp. 703 - 705
Main Authors: Senz, St, Kästner, G., Gösele, U., Gottschalch, V.
Format: Journal Article
Language:English
Published: 07-02-2000
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Summary:A 30 nm (100) GaAs layer was transferred by twist wafer bonding to a (100) GaAs handling wafer. A similar structure was proposed in the literature as a “compliant substrate.” Transmission electron microscopy and x-ray diffraction of 40 and 300 nm epitaxial InGaAs films (0.5% misfit) showed no evidence of a relaxation mechanism specifically attributed to a compliant substrate. The 40 nm film was nearly pseudomorphic without any evidence of a relaxation mechanism, like grain-boundary sliding. The possibility of grain-boundary slip along the twist-bonded interface is discussed.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.125867