Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence

• Published in: Applied physics letters Vol. 72; no. 9; pp. 1066 - 1068
• Main Authors: Minsky, M. S., Fleischer, S. B., Abare, A. C., Bowers, J. E., Hu, E. L., Keller, S., Denbaars, S. P.
• Format: Journal Article
• Language: English
• Published: 02-03-1998
• ISSN: 0003-6951; 1077-3118
• DOI: 10.1063/1.120966

Recombination in single quantum well and multiquantum well InGaN/GaN structures is studied using time-resolved photoluminescence and pulsed photoluminescence measurements. Room-temperature measurements show a rapid lifetime (0.06 ns) for a single quantum well structure, while an increasingly long decay lifetime is measured for multiquantum wells as more quantum wells are incorporated into the structure. Temperature-dependent lifetime measurements show that a nonradiative recombination mechanism activates above 45 K in the single quantum well but is less important in the multiquantum wells.