Bidirectional blocking junctions in SOI

Back-to-back junction (n-p-n) structures were fabricated in silicon-on-sapphire (SOS), in polysilicon-on-SiO 2 , and in silicon-on-insulator (SOI) prepared by high-dose oxygen ion implantation. Since the structure is actually a bipolar transistor operated with an open base, the geometry and doping l...

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Bibliographic Details

Published in:	IEEE circuits and devices magazine Vol. 3; no. 6; pp. 27 - 30
Main Authors:	Maclver, Bernard A., Jain, Kailash C., Valeri, Stephen J.
Format:	Journal Article
Language:	English
Published:	IEEE 01-11-1987
Subjects:	Doping Electric breakdown Fabrication Geometry Junctions Optical fiber sensors Optical fibers
Online Access:	Get full text
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