Bidirectional blocking junctions in SOI

• Published in: IEEE circuits and devices magazine Vol. 3; no. 6; pp. 27 - 30
• Main Authors: Maclver, Bernard A., Jain, Kailash C., Valeri, Stephen J.
• Format: Journal Article
• Language: English
• Published: IEEE 01-11-1987
• Subjects: Doping; Electric breakdown; Fabrication; Geometry; Junctions; Optical fiber sensors; Optical fibers
• ISSN: 8755-3996; 1558-1888
• DOI: 10.1109/MCD.1987.6323177

Back-to-back junction (n-p-n) structures were fabricated in silicon-on-sapphire (SOS), in polysilicon-on-SiO 2 , and in silicon-on-insulator (SOI) prepared by high-dose oxygen ion implantation. Since the structure is actually a bipolar transistor operated with an open base, the geometry and doping levels were adjusted to spoil its gain and thereby achieve symmetrical bidirectional blocking. In all three cases, ideal plane-junction breakdown was observed for both polarities of applied voltage when precautions were taken to avoid local field-enhancing geometries.