A single-crystal silicon DC-40 GHz RF MEMS switch

A single-crystal silicon DC-40 GHz RF MEMS switch

This paper presents a new DC-40 GHz RF MEMS switch whose moving part is made of single-crystal silicon (SCS). Unlike thin-film metals commonly employed in RF MEMS switches, SCS is essentially defect-free, has well known and repeatable material properties and is virtually stress free. This makes the...

Full description

Saved in:
Bibliographic Details
Published in:2009 IEEE MTT-S International Microwave Symposium Digest pp. 1633 - 1636
Main Authors: Fruehling, A., Pimpinella, R., Nordin, R., Peroulis, D.
Format: Conference Proceeding
Language:English
Published: IEEE 01-06-2009
Subjects:
Loss measurement
Manufacturing processes
Material properties
Process design
Radio frequency
Radiofrequency microelectromechanical systems
Silicon
Stress
Switches
Transistors
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper presents a new DC-40 GHz RF MEMS switch whose moving part is made of single-crystal silicon (SCS). Unlike thin-film metals commonly employed in RF MEMS switches, SCS is essentially defect-free, has well known and repeatable material properties and is virtually stress free. This makes the switch design insensitive to process variations and amenable to high-yield manufacturing. Measured RF switches exhibit an on state insertion loss of less than 0.3 dB and an off state isolation of higher than 30 dB up to 40 GHz. Measured switching time is less than 4 us.
ISBN:1424428033
9781424428038
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2009.5166026